- I=(mgRrT^2)/(4pi ^2)l g=9.81 pi =3.14 m=0.4458pm 0.0002 R_(t)=0.100pm 0.001 r=0.060pm 0.001 l=0.685pm 0.001 T=1.5067pm 0.0008 delta Ilt Delta I
- 1) Pak no Koparu no/13 3 MuH CO CKOpOCTbIO 18M/MMH . OCTa/1bHO11 nytb oH non3 co CKOpOCTbIO 16 M/MVH. CKO/1bKO BpeMeHu norpe6oBanoct paky Ha OCTaIbHOM nymb , ecnn oH npono/B 118 M?
- Ex. 4. Look through the text and: 1) find different types of diodes and try to translate them ; 2) try to explain what a diode is; 3)recollect the type:of a diode you know; 4) look through text and say: what phenomenon is the base for diode operation; 5) say if the following sentence is true: "Diodes are made in order to meet the purpose for which they will be used"; 6) read the text and be ready to translate it. A diode is a p-n junction semiconductor that allows current to flow in only one direc- tion. A diode generally refers to a two-terminal solid-state semiconductor device that presents low impedance to current flow in one direction and high impedance to curzent flow in the op- posite direction.Most diodes are made from a host crystal of silicon (S i) with appropriate lm- purity elements introduced to modify , in a controlled manner, the electrical characteristics of the device. These diodes are the typical p-n junction (or bipolar) devices used in electronic circuits.Another type is the Schottky diode (unipolar), produced by placing a metal layer di- rectly onto the semiconductor. The metal semiconc luctor interface serves the same function as the p-n junction in the common diode structure.Other semiconductor materials such as galli- um-arsenide (GaAs)and silicon-carbide (SiC) are also in use for new and specialized appli- cations of diodes . Diodes are made , based on the purpose for which they are going to be used. For example, a varactor diode is used as a variable capacitor and a zener diode is operated in the reverse biased mode, hence their manufacturing process is also different. An LED is con- structed, in such a way that the holes and electrons on recombination , release energy in the form of light. Hence , they are manufactured from materials like gallium arsenide , gallium phosphide, etc instead of silicon, so as to have a higher potential barrier.
- X1. Tpakrop 3a nepBble 5 MHH npoexan 600 M . KaKOY nyTE OH Trpoãjer 3a 0,5 4, IIBHrasicE c Toã xe CKOpOCTbIO? 2. OZHHH Benocunentricr 12 C LIBHTAIICA CO CKOPOCTB1O 6m/c a BTOpoã npoexan 3TOT xe y4acTOK 3a 9 c. KakoBa CKOPOCTE BTOpOTO BETOCHITERHICIa Hà 3TOM y4aCTKC IIYTH? 3. ABTOMOOHIIb exam 0 ,5 4 co cKOpOCTblO 90km/4. C KaKOH CKOPOCTBIO JIOIDKEH exarb BenochnellHCI, 4TO6BI IIpoeXaTb TOT Xe yuacTOK nyTH 3a 1430 MHH? 4. Benocumenucr 3a 40 MHH npoexan 10 KM. 3a CKOTT5KO BpeMeHH OH IIpoener eme 25 KM, IIBHTAACE C TOỮ xe cKopocTblo? 5. ABTOMO6HIb 3a nepBble 10 MHH npoexar 900 M. Kakoã nyTb OH npo}ner 3a 0,54, ABHrañCb C TOX xe ckopocTblo? 6. B noupbibHoN Textikike . KaKOH AJHHbL Ha_{10 B3STE nocne ero 3aropaHAs yeneri orbexarib Ha paccrosHKe 300 M? Ckopoctb 6era 5m/c a cKOpOCTE pacripocrpaHeHBN TIIaMEHH -0,8cm/c.
- X1. Tpakrop 3a nepBble 5 MHH npoexan 600 M . KaKOã nyTE OH Trpoã,1eT 3a 0,5 4, IBHrasicE c Toã xe cKopocTbro? 2. OLHHH Be710CHTVLLHCT 12 C IIBHranca co cKOpOCTB10 6m/c a BTOpoã npoexan 3TOT xe y4acTOK 3a 9 c. Kakosa CKOPOCTE BTOpOrO Be70CHTTVLLHCTa Ha 3TOM y44CTKẻ IIYTH? 3. ABTOMO6HIIb exam 0 ,5 4 co cKOpOCTblO 90km/4. C kaKOH cKOpOCTBKO HOIDKEH exarb Benochnentict, 4TO6BI npoexaTb TOT XE yuacTOK nyTH 3a 1 430 MHH? 4. Benocunenucr 3a 40 MHH npoexan 10 KM. 3a CKOTTEKO BpeMeHH OH IIpoener eme 25 KM, IIBHTagCb C TOỮ xe ckopocTbio? 5. ABTOMO5HTb 3a nepBble 10 MHH npoexan 900 M. Kakoã nyTb OH npo}ner 3a 0,54, IIBHTASIC5 C TOH xe ckopocTblo? 6. B noipbibrior Textikike . KaKOH AlHHbI HạLIO B3NTB iuHyp, 4TO6b nocne ero 3aropaHRA yeneri orbexartb Ha paccrosHize 300 M? CKopocTb 6era 5m/c a CKOPOCTE pacripocrpaHeHHS TIIaMeHH -0,8cm/c.
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